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Effect analysis simulator Product List

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3D simulation effect analysis simulator for MOSFETs

3D simulation effect analysis simulator for MOSFETs

Analysis tool for 3D simulation effects in MOSFETs.

In STI (shallow trench isolation) confined MOS, the SiO2/Si interface separation causes dopant diffusion in the width direction. For HV (high voltage) MOSFETs, 3D diffusion and narrow gate side fields shift the threshold voltage Vth downward as if reducing the width. In the typical process flow of nanoMOSFETs, reducing the width to W>0.1 um increases Vth. In square-trenched UMOS, the effects of geometry and 3D diffusion shift Vth downward as if reducing the square size.

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Band-to-band tunneling effect analysis simulator

Band-to-band tunneling effect analysis simulator

Analysis tool for the tunneling effect in heterojunctions.

The quantum tunneling model cannot ignore the impact on carrier transport at high doping levels. The change in aluminum composition grading allows for a pseudo quantum tunneling effect by flattening the potential barrier. However, the distance selection of the aluminum composition grading is crucial. By adding sufficiently many internal extra mesh points, effects similar to those of composition grading can be achieved. The quantum tunneling model is the most reliable method for enhancing carrier transport through quantum mechanics.

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Multi-body exciton effect analysis simulator

Multi-body exciton effect analysis simulator

Analysis tools for many-body effects, exciton effects, and inhomogeneous broadening effects in device simulation.

Incorporation of many-body effects and exciton effects, as well as inhomogeneous broadening effects, into the device simulator. The results are consistent with theoretical and experimental data published in the literature. Crosslight recommends a new gain/absorption spectrum model to all users.

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